CREE Broadband Sheet, Carpatec, Sweden

Publisher's Description

GaN HEMT Packaged Transistors, GaN HEMT Die, MMICs, & Switches for Extremely Wide Band Applications GaN HEMT devices are ideal for ultra broadband amplifier applications. The intrinsic properties of high power density, low parasitic, and high FT allow for multi-octave to instantaneous bandwidth amplifiers. This family of products consists of packaged, unmatched discrete transistors from output powers from 6 W to 180 W (CW) at 28 V and packaged 50-ohm MMIC amplifiers suitable from DC-6 GHz applications operating at 28 V or 50 V. This portfolio also includes bare discrete die and bare MMIC die designed for hybrid amplifiers and multi-function transmit/receive modules.

Added By

Carpatec

Categories

business, education, science & technology

Tags

extremely wide / mmics / transistors / hemt / switches / sweden / packaged / gan / cree / carpatec / broadband / band / applications

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